Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices

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Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

164-167

Citation:

J. Schoeck et al., "Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices", Materials Science Forum, Vol. 924, pp. 164-167, 2018

Online since:

June 2018

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