Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices


Article Preview

Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




J. Schoeck et al., "Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices", Materials Science Forum, Vol. 924, pp. 164-167, 2018

Online since:

June 2018




* - Corresponding Author

[1] P. Berwian, D. Kaminzky, K. Roßhirt et al., Solid State Phenomena, 242 (2016) pp.484-489.

[2] S.S.V. Gupta, S. Saxena, IOSR Journal of Electronics and Communication Engineering, Special Issue AETM'16, (2016) pp.119-124.

[3] J. Schoeck, J. Buettner, M. Rommel, T. Erlbacher, A. J. Bauer, Mater. Sci. Forum, 897 (2017) pp.427-430.

[4] T. Kimoto, J. A. Cooper, Fundamentals of silicon carbide technology, Wiley IEEE, Singapore (2014) p.95.

[5] R. T. Tung, Materials Science and Engineering: R, 35 (1-3) (2001) pp.1-138.

Fetching data from Crossref.
This may take some time to load.