Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
J. Schoeck et al., "Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices", Materials Science Forum, Vol. 924, pp. 164-167, 2018