Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices


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In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]impl ≈ 9ž·1016 cm-3 and by 27 % for a high doped layer with [Al]impl ≈ 2·ž1019 cm-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




J. Weiße et al., "Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices", Materials Science Forum, Vol. 924, pp. 184-187, 2018

Online since:

June 2018




* - Corresponding Author

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