Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

Abstract:

Article Preview

In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]impl ≈ 9ž·1016 cm-3 and by 27 % for a high doped layer with [Al]impl ≈ 2·ž1019 cm-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

184-187

Citation:

J. Weiße et al., "Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices", Materials Science Forum, Vol. 924, pp. 184-187, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology, 1st ed. (Wiley, Singapore, 2014) p.521.

[2] Z. Tian, N. R. Quick and A. Kar, Acta Materialia, Vol. 54, Issue 16, 2006, pp.4273-4283.

[3] M. Rambach, A. J. Bauer and H. Ryssel, Phys. Stat. Sol. (b) 245, No. 7, 2008, pp.1315-1326.

[4] S. Asada, T. Okuda, T. Kimoto and J. Suda, Appl. Phys. Exp., Vol. 9, No. 4, 2016, p.041301.

[5] G. Pensl, F. Schmid, F. Ciobanu, M. Laube, S. A. Reshanov, N. Schulze, K. Semmelroth, H. Nagasawa, A. Schöner and G. Wagner, Mater. Sci. Forum, Vol. 433-436, 2003, pp.365-370.

[6] A. Koizumi, J. Suda and T. Kimoto, Appl. Phys., Vol. 106, 2009, p.013716.

[7] G. Wellenhofer and U. Rössler, Phys. Stat. Sol. (b), Vol. 202, 1997, pp.107-123.

[8] M. Schadt, Dissertation, Friedrich-Alexander-University Erlangen-Nuremberg, (1997).

[9] F. Schmid, M. Krieger, M. Laube, G. Pensl and G. Wagner, In: W.J. Choyke, H. Matsunami, G. Pensl (eds) Silicon Carbide, Advanced Texts in Physics (Springer, Berlin, Heidelberg, 2004) pp.517-536.

Fetching data from Crossref.
This may take some time to load.