Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide

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We propose an empirical model to predict electrical activation ratios of aluminium- and boron-implanted silicon carbide with respect to various annealing temperatures. The obtained parameters and model extensions are implemented into Silvaco’s Victory Process simulator to enable accurate predictions of post-implantation process steps. The thus augmented simulator is used for numerous simulations to evaluate the activation behavior of p-type dopants as well as for the full process simulation of a pn-junction SiC diode to extract the carrier and acceptor depth profiles and compare the results with experimental findings.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

192-195

Citation:

V. Šimonka et al., "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide", Materials Science Forum, Vol. 924, pp. 192-195, 2018

Online since:

June 2018

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DOI: https://doi.org/10.23919/sispad.2017.8085280

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