Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide
We propose an empirical model to predict electrical activation ratios of aluminium- and boron-implanted silicon carbide with respect to various annealing temperatures. The obtained parameters and model extensions are implemented into Silvaco’s Victory Process simulator to enable accurate predictions of post-implantation process steps. The thus augmented simulator is used for numerous simulations to evaluate the activation behavior of p-type dopants as well as for the full process simulation of a pn-junction SiC diode to extract the carrier and acceptor depth profiles and compare the results with experimental findings.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
V. Šimonka et al., "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide", Materials Science Forum, Vol. 924, pp. 192-195, 2018