Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС

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The diffusion of the carbon vacancy (VC) in n-type 4H-SiC has been studied using Deep Level Transient Spectroscopy (DLTS). Samples grown along two different crystallographic planes, (0001) or c-cut and (11-20) or a-cut, have been utilized. The samples were implanted with 4.0 MeV C ions to generate VC’s and subsequently annealed at temperatures between 200 and 1500 °C. Following each annealing stage, concentration versus depth profiles of the VC were obtained. The VC is essentially immobile in both the c-cut and a-cut samples up to at least 1200 °C. The 1400 °C annealing stage, however, resulted in considerable migration, predominantly along the a-direction. Using half the difference in the Full Width at Half Maximum (FWHM) of the initial and diffused concentration profiles as a measure of the diffusion length, we deduced the diffusivity of the VC at 1400 °C to be approximately (3.8±1.1)×10-14 cm2/s along the c-axis and (4.1±1.2)×10-13 cm2/s along the a-axis, indicating a substantial anisotropy for the VC diffusion in 4H-SiC.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

200-203

Citation:

M. E. Bathen et al., "Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС", Materials Science Forum, Vol. 924, pp. 200-203, 2018

Online since:

June 2018

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$38.00

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[1] P. B. Klein, et al., Appl. Phys. Lett. 88 (2006) 052110.

[2] K. Danno, et al., Appl. Phys. Lett. 90 (2007) 202109.

[3] G. Alfieri, et al., J. Appl. Phys. 98 (2005) 043518.

[4] H. M. Ayedh, R. Nipoti, A. Hallén and B. G. Svensson, Appl. Phys. Lett. 107 (2015) 252102.

[5] L. S. Løvlie, L. Vines and B. G. Svensson, J. Appl. Phys. 111 (2012) 103719.

[6] N. T. Son, et al., Phys. Rev. Lett. 109 (2012) 187603.

[7] J. F. Ziegler, http://www.srim.org (2013).

[8] J. Philibert, Atom Movements: Diffusion and Mass Transport in Solids, Les Éditions de Physique, (1991).

[9] N. Iwamoto and B. G. Svensson, Defects in Semiconductors (Elsevier, Waltham, MA02451), 2015, Ch. 10, 369-407 and references therein.

[10] Z. Zolnai, et al., J. Appl. Phys 96 (2004) 2406.

[11] L. Torpo, et al., J. Phys.: Condens. Matter 13 (2001) 6203.

[12] X. Wang, et al., J. Appl. Phys. 114 (2013) 194305.

[13] M. E. Bathen, et al., in preparation.