Various Single Photon Sources Observed in SiC Pin Diodes
Luminescence centers formed in the vicinity of SiC surface are expected to be utilized as Single Photon Sources (SPSs) because of the high-brightness and the potential of electric control at room temperature. In order to gain more insight into the surface SPSs, 4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The location dependence of the observed surface SPSs indicates that the oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions had an effect. The peak wavelength of luminescence spectra widely varies depending on their locations, indicating lattice strain introduced by the oxide layer has the potential to affect the luminescence spectra.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
H. Tsunemi et al., "Various Single Photon Sources Observed in SiC Pin Diodes", Materials Science Forum, Vol. 924, pp. 204-207, 2018