Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures


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The change in the current-voltage characteristics and in Nd-Na values in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017 cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




A. A. Lebedev et al., "Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures", Materials Science Forum, Vol. 924, pp. 217-220, 2018

Online since:

June 2018




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