Deep Level Defects in 4H-SiC Epitaxial Layers


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We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




I. Capan et al., "Deep Level Defects in 4H-SiC Epitaxial Layers", Materials Science Forum, Vol. 924, pp. 225-228, 2018

Online since:

June 2018




* - Corresponding Author

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