Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

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The carbon vacancy (VC) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward to address the thermodynamic equilibration of VC, elucidating the possible atomistic mechanisms that control the VC equilibration under C-rich conditions. Frenkel pair generation, injection of carbon interstitials (Ci’s) from the C-rich surface, followed by recombination with VC’s, and diffusion of VC’s towards the surface appear to be the major mechanisms involved. The modelling results show a close agreement with experimental deep-level transient spectroscopy (DLTS) depth profiles of VC after annealing at different temperatures.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

233-236

Citation:

H. M. Ayedh et al., "Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC", Materials Science Forum, Vol. 924, pp. 233-236, 2018

Online since:

June 2018

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$38.00

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