Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules
Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
M. Arzig et al., "Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules", Materials Science Forum, Vol. 924, pp. 245-248, 2018