Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules


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Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




M. Arzig et al., "Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules", Materials Science Forum, Vol. 924, pp. 245-248, 2018

Online since:

June 2018




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[1] Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon, Norman Uhlmann; Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping, Cryst. Res. Technol. 50, No. 1, 2–9 (2015).


[2] Zhe Chuan Feng, SiC Power Materials: Devices and Applications, Springer-Verlag Berlin Heidelberg New York, (2004).

[3] D.D. Avrov, A.S. Bakin, S.I. Dorozhkin, V.P. Rastegaev, Yu.M Tairov; The analysis of mass transfer in system ß-SiC-α-SiC under silicon carbide sublimation growth, J. Crystal Growth 198/199 (1999) 1011-1014.


[4] Dong Nyung Lee; A model for development of orientation of vapour deposits. J. Mater. Sci. 24 (1989) 4375-4378.


[5] Tsunenobu Kimoto, Hiroyuki Matsunami; Nucleation and step motion in chemical vapor deposition of SiC on 6H-SiC{0001} faces, J. Appl. Phys. 76, 7322 (1994).