Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules

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Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

245-248

Citation:

M. Arzig et al., "Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules", Materials Science Forum, Vol. 924, pp. 245-248, 2018

Online since:

June 2018

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$38.00

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