Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures


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A study of how electron irradiation affects the current-voltage (I-V) and electroluminescence (EL) characteristics of two types of 4H-SiC n+p structures with p-base and base doping to ~5∙1015 cm-3 is presented. The characteristics were measured prior to irradiation and after each of five stages of irradiation with 0.9 MeV electrons at doses in the range from 1∙1015 to 1.1∙1016 cm-2. The irradiation leads to an increase in the recombination current, decrease in the intensity of the edge EL (hνmax≈3.18 eV), and increase in the intensity of the infra-red (IR) EL (hνmax≈1.35 eV), which starts to predominate. Presumably, this indicates that the nonequilibrium carrier lifetime decreases and the concentration of acceptor type defects grows as a result of the irradiation. The IR EL, attributed to a complex defect containing a silicon vacancy, is of interest for development of single-photon sources of light.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




A. M. Strel'chuk et al., "Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures", Materials Science Forum, Vol. 924, pp. 257-260, 2018

Online since:

June 2018




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[1] V.V. Makarov, Sov. Phys. Solid State 9 (1967) 457-461.

[2] I.S. Gorban', et al., Sov. Phys. Solid State 15 (1973) 548-550.

[3] V.M. Gusev, et al., Sov. Phys. Semicond. 15 (1981) 1413-1416.

[4] A.A. Lebedev, Radiation Effects in Silicon Carbide, MRF LLC 6, Millersville, PA, (2017).

[5] A.M. Strel`chuk, et al., Mater. Sci. Forum 483-485 (2005) 993-996.

[6] M.M. Anikin, et al., Semiconductors 28 (1994) 171-174.

[7] F. Fuchs, et al., Sci. Rep. 3 (2013) 1637-1641.

[8] T. Ohshima, et al., Mater. Sci. Forum 897 (2017) 233-237.