Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

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Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140mm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption (TPA) with a pulsed 586nm laser, and confocal measurement of time resolved photoluminescence (TRPL) decay from the excited region. A depth resolution of ≈10mm was obtained. The PL decay curves were analyzed using a recently developed formalism that takes into account the TPA excitation, carrier diffusion and surface/interface recombination. The carrier lifetime decreases near the top surface of the epitaxial layer as well as near its interface with the substrate.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

265-268

Citation:

N. A. Mahadik et al., "Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption", Materials Science Forum, Vol. 924, pp. 265-268, 2018

Online since:

June 2018

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$38.00

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