Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC


Article Preview

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




S. Mae et al., "Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC", Materials Science Forum, Vol. 924, pp. 269-272, 2018

Online since:

June 2018




* - Corresponding Author

[1] P. B. Klein, J. Appl. Phys. 103, 033702 (2008).

[2] J. Linnros, J. Appl. Phys. 84 275 (1998).

[3] A. Galeckas, V. Grivickas, J. Linnros, H. Bleichner, and C. Hallin, J. Appl. Phys. 81, 3522 (1997).

[4] S. Zollner, J. G. Chen, Erika Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, J. Appl. Phys. 85, 8353 (1999).

[5] T. Tawara, T. Miyazawa, M. Ryo, M. Miyazato, T. Fujimoto, K. Takenaka, S. Matsunaga, M. Miyajima, A. Otsuki, Y. Yonezawa, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, J. Appl. Phys. 120, 115101 (2016).

DOI: https://doi.org/10.1063/1.4962717