Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

Abstract:

Article Preview

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

269-272

Citation:

S. Mae et al., "Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC", Materials Science Forum, Vol. 924, pp. 269-272, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] P. B. Klein, J. Appl. Phys. 103, 033702 (2008).

[2] J. Linnros, J. Appl. Phys. 84 275 (1998).

[3] A. Galeckas, V. Grivickas, J. Linnros, H. Bleichner, and C. Hallin, J. Appl. Phys. 81, 3522 (1997).

[4] S. Zollner, J. G. Chen, Erika Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, J. Appl. Phys. 85, 8353 (1999).

[5] T. Tawara, T. Miyazawa, M. Ryo, M. Miyazato, T. Fujimoto, K. Takenaka, S. Matsunaga, M. Miyajima, A. Otsuki, Y. Yonezawa, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, J. Appl. Phys. 120, 115101 (2016).

DOI: https://doi.org/10.1063/1.4962717