The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal

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The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

27-30

Citation:

S. H. Choi et al., "The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal", Materials Science Forum, Vol. 924, pp. 27-30, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

[1] R. Madar, Nature. 430, (2004) 974-975.

[2] D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, Nature. 430, (2004) 1009-1012.

[3] Yakimova, R. Tuominen, M. Bakin, A. S. Fornell, J. O. Vehanen, A. Janzen, Inst. Phys. Conf. Ser. 142, (1996) 101−104.

[4] K. Gillessen, W.V Munch, J. Crystal Growth. 29, (1973) 263-268.

[5] D. H. Hofmann, M.H. Mueller, Mater. Sci. Eng. B 61–62, (1999) 29-39.

[6] K. Danno, H. Saitoh, A. Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Y. Kawai, Mater. Sci. Forum. 13-16, (2010) 645-648.

[7] T. Umezakia, D. Koike, A. Horio, S. Harada, T. Ujihara, Mater. Sci. Forum. 778-780, (2014) 63-66.

[8] H. J. Scheel, J. Crystal Growth. 13-14, (1972) 560-565.

[9] J.E. Lee, B.G. Kim, J.Y. Yoon, M.T. Ha, M.H. Lee, Y.H. Kim, W.S Seo, H.J. Choi, W.J. Lee, S.M. Jeong, Ceramics International. 42, (2016) 11611-11618.