The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
S. H. Choi et al., "The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal", Materials Science Forum, Vol. 924, pp. 27-30, 2018