Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon
Epitaxial cubic silicon carbide films on silicon have attracted extensive interest for semiconductor device applications such as high-voltage, high-frequency diodes, and hetero-junction bi-polar transistors . This is because they can offer access to the properties of the SiC material such as its wide band gap and high thermal conductivity on the more conventional silicon substrates . Rahimi et al. have shown, however, that the substantial tensile strain generated from the lattice and thermal expansion coefficient mismatch between 3C-SiC and silicon, may reduce the band gap in the SiC epitaxial films . Nevertheless, the impact of this phenomenon on the electrical and electronic performance of the epitaxial SiC films on silicon has not been fully elucidated to date; such information is vital to obtain the optimal performance of devices fabricated from these strained heterojunctions.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. Pradeepkumar et al., "Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon", Materials Science Forum, Vol. 924, pp. 297-301, 2018