Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon

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Epitaxial cubic silicon carbide films on silicon have attracted extensive interest for semiconductor device applications such as high-voltage, high-frequency diodes, and hetero-junction bi-polar transistors [1]. This is because they can offer access to the properties of the SiC material such as its wide band gap and high thermal conductivity on the more conventional silicon substrates [2]. Rahimi et al. have shown, however, that the substantial tensile strain generated from the lattice and thermal expansion coefficient mismatch between 3C-SiC and silicon, may reduce the band gap in the SiC epitaxial films [3]. Nevertheless, the impact of this phenomenon on the electrical and electronic performance of the epitaxial SiC films on silicon has not been fully elucidated to date; such information is vital to obtain the optimal performance of devices fabricated from these strained heterojunctions.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

297-301

Citation:

A. Pradeepkumar et al., "Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon", Materials Science Forum, Vol. 924, pp. 297-301, 2018

Online since:

June 2018

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[1] S. Nishino et al., J. Electrochem. Soc. 127(12) (1980) 2674-2680.

[2] X. Song et al., Appl. Phys. Lett. 96(14) (2010) 142104-142104-3.

[3] R. Rahimi et al., J. Phys. D: Appl. Phys. 42(5) (2009) 055108.

[4] A. Pradeepkumar et al., Appl. Phys. Lett. 109 (2016) 011604-011604-5.

[5] A. Pradeepkumar et al., Appl. Phys. Lett. 109 (2016) 196102-196102-2.

[6] M. Zielinski et al., Mater. Sci. Eng. B 165(1) (2009) 9-14.

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