THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field


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Recently the intense terahertz electroluminescence from monopolar n++–n –n+ structures of 6H- and 8H-SiC of natural superlattices at helium temperatures due to Bloch oscillations was discovered. In the present work we present the THz emission spectra of bipolar n++–π–n+ structures (π is a high-resistance layer of p-type conductivity) of natural superlattices 4H-, 8H- and 15R-SiC at 7 K. The bipolar n++–π–n+ structures of 4H- and 8H-SiC were analogous to those of structures for which the negative differential conductivity effect was observed earlier for three polytypes (4H, 6H and 8H) at T=300 K. We demonstrate resemblance and differences of the spontaneous THz emission spectra for the monopolar and bipolar 4H-, 6H- 8H- and 15R-SiC natural superlattices caused by Bloch oscillations of electrons in the SiC natural superlattice.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




V. I. Sankin et al., "THz Emission from SiC Natural Superlattice Diodes Induced by Strong Electrical Field", Materials Science Forum, Vol. 924, pp. 310-313, 2018

Online since:

June 2018




* - Corresponding Author

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