About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C


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The electrical activation of 1×1020 cm-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




R. Nipoti et al., "About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C", Materials Science Forum, Vol. 924, pp. 333-338, 2018

Online since:

June 2018




* - Corresponding Author

[1] T. Kimoto, and J.A. Cooper, Fundamentals of Silicon Carbide Technology, first ed., John Wiley & Sons Singapore Pte. Ltd., (2014).

[2] A. Yu. Kuznetsov, J. Wong-Leung, A. Hallén, C. Jagadish, and B. G. Svensson, J. Appl. Phys. 94 (2003) 7112-7115.

[3] R. Nipoti, A. Nath, Mulpuri V. Rao, A. Hallén, A. Carnera, and Y-L. Tian, Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC, Appl. Phys. Express 4 (2011) 111301.

DOI: https://doi.org/10.1143/apex.4.111301

[4] R. Nipoti, R. Scaburri, A. Hallén, and A. Parisini, Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC, J. Mater. Res. 28 (2013) 17-22.

DOI: https://doi.org/10.1557/jmr.2012.207

[5] P. Fedeli, M. Gorni, A. Carnera, A. Parisini, G. Alfieri, U. Grossner, and R. Nipoti, 1950  °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time, ECS Journal of Solid State Science and Technology 5 (2016).

DOI: https://doi.org/10.1149/2.0361609jss

[6] A. Poggi, F. Bergamini, R. Nipoti, S. Solmi, M. Canino, and A. Carnera, Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions, Appl. Phys. Lett. 88 (2006) 162106.

DOI: https://doi.org/10.1063/1.2196233

[7] R. Nipoti, F. Mancarella, F. Moscatelli, R. Rizzoli, S. Zampolli, and M. Ferri, Electrochemical and Solid-State Lett. 13(2010) H432-H435.

DOI: https://doi.org/10.1149/1.3491337

[8] M. S. Janson, M. K. Linnarsson, A. Hallén, and B. G. Svensson, Ion implantation range distributions in silicon carbide, J. Appl. Phys. 93 (2003) 8903-8909.

DOI: https://doi.org/10.1063/1.1569666

[9] F. Giannazzo, M. Rambach, D. Salinas, F. Roccaforte, and V. Raineri, Electrical characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy, Mater. Sci. Forum 615-617 (2009) 457-460.

DOI: https://doi.org/10.4028/www.scientific.net/msf.615-617.457

[10] T. Tsirimpis, M. Krieger, H. B. Weber, and G. Pensl, Electrical activation of B+-ions implanted into 4H-SiC, Mater. Sci. Forum 645-648 (2010) 697-700.

DOI: https://doi.org/10.4028/www.scientific.net/msf.645-648.697

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