Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS

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We investigated the relationship between ion implantation-induced defects and electrical characteristics, especially focusing on the leak failure rate in SiC IEMOSs and PN diodes. It was found that dislocation exists in each leakage point by analyzing identical leak-failed IEMOS by emission microscopy and refraction X-ray topography. The leak failure rate of the PN diodes and IEMOS was improved with an increase in the ion implantation temperature under the implantation and annealing conditions used in this experiment. It is considered that ion implantation-induced defects lead to an increase in leak failure rates, and also enable a decrease in leak failure rates by raising the implantation temperature up to 600 deg.C.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

353-356

Citation:

Y. Furukawa et al., "Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS", Materials Science Forum, Vol. 924, pp. 353-356, 2018

Online since:

June 2018

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