Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

Abstract:

Article Preview

This study shows that a thin Ni film on Al/Ti/4H-SiC metal pads allows to preserve the pad form factor during a 1000 °C/2 min treatment, provided that the Al and Ti film thicknesses are sufficiently thin. Moreover, by reducing the Al to Ti thickness ratio, droplet formation in the contact area is avoided and a mirror-like appearance is obtained. This optimal contact morphology corresponds to a specific contact resistance of few 10-4 Ωcm2 at room temperature on p-type 4H-SiC with resistivity in the range 0.1 – 1 Ωcm.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

385-388

Citation:

R. Nipoti et al., "Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC", Materials Science Forum, Vol. 924, pp. 385-388, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] Susumu Tsukimoto, Kazuhiro Ito, Zhongchang Wang, Mitsuhiro Saito,Yuichi Ikuhara, Masanori Murakami, Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC, Materials Transactions 50(5) (2009) 1071-1075.

DOI: https://doi.org/10.2320/matertrans.mc200831

[2] D. K. Schroder, Semiconductor Material and Device Characterization, 3rd Edition, Wiley-IEEE Press, (2006).

[3] P. Fedeli, M. Puzzanghera, F. Moscatelli, R. A. Minamisawa, G. Alfieri, U. Grossner, R. Nipoti, Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC, Mater. Sci. Forum 897 (2017) 391-394.

DOI: https://doi.org/10.4028/www.scientific.net/msf.897.391

[4] R. Nipoti, A. Carnera, G. Alfieri, and L. Kranz, About the electrical activation of 1´1020 cm-3 ion implanted Al in 4H-SiC at annealing temperatures in the range 1500 - 1950°C, presentation MO.CIP.3 at ICSCRM2017, Mat. Sci. Forum (submitted).

[5] Hailong Yu, Xufang Zhang, Huajun Shen, Yidan Tang, Yun Bai, Yudong Wu, Kean Liu, and Xinyu Liu, Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC, J. Appl. Phys. 117 (2015) 025703.

DOI: https://doi.org/10.1063/1.4905832

[6] R. Nipoti, M. Puzzanghera, M. Canino, and G. Sozzi, Ni-Al-Ti ohmic contacts on 1 ´ 1020 cm-3 Al+ ion implanted 4H-SiC, proceedings of ECS 232th meeting, National Harbor, MD, Oct. 1-5, 2017, ECS Transactions 80 (2017) 117-122.

DOI: https://doi.org/10.1149/08007.0117ecst

Fetching data from Crossref.
This may take some time to load.