Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer


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Nickel (Ni) is the most widely used metal for the formation of ohmic contact on n-type SiC. However, the irregular contact can potentially cause degradation in the device performance. To form the uniform ohmic interface, titanium (Ti) was applied as a barrier layer. Ni/Ti/SiC and Ti/Ni/SiC contact metal structures were prepared, and ohmic contacts were formed using a rapid thermal annealing process. The interfacial properties of both contact metal structures were enhanced by applying the Ti layer. The specific contact resistance of ohmic contacts showed a slightly lower or similar value (~ low 105 Ωcm2) compared with the specific contact resistance values formed from only the Ni contact metal.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




M. Na et al., "Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer", Materials Science Forum, Vol. 924, pp. 397-400, 2018

Online since:

June 2018




* - Corresponding Author

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