Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC

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A sandwich structure of Ni/Nb/4H-SiC was prepared and annealed at different temperature from 750°C to 1050°C. The electrical property and crystalline structure of Ni/Nb electrode was characterized by transmission line method and X-ray diffraction. It was found that the annealing temperature and the thickness of Ni/Nb layer played an important role in obtaining Ohmic contact. A low specific contact resistance of 1.1×10-5 Ω·cm2 was obtained when the Ni(50nm)/Nb(50nm) electrode was annealed at 1050°C. The Ohmic contact mechanism of Ni/Nb/4H-SiC was proposed.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

405-408

Citation:

X. C. Liu et al., "Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC", Materials Science Forum, Vol. 924, pp. 405-408, 2018

Online since:

June 2018

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$38.00

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[1] T. Kimoto, J.A. Cooper, Fundamentals of Silicon Carbide Technology Growth, (Wiley-IEEE Press, 2014).

[2] L.M. Porter, R.F. Davis, Mater. Sci. Eng. B, 34 (1995) 83.

[3] W.P. Leroy, C. Detavernier, R.L. Van Meirhaeghe, C. Lavoie, J. Appl. Phys. 101, (2007) 053714.

[4] G. Oskam, P.C. Searson, M.W. Cole, Appl. Phys. Lett. 76 (2000) 1300.

[5] R.F. Li, Z.N. Guo, J.J. Yang, X.P. Zeng, W.X. Yuan, Mon. Chem. 143 (2012) 1329.

[6] C.C. Dai, X.C. Liu, T.Y. Zhou, S.Y. Zhuo, B. Shi, E.W. Shi, Chin. Phys. B, 23 (2014) 066803.

[7] J. Rogowski, A. Kubiak, Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater. 177 (2012) 1318.

[8] J.H. Park, P.H. Holloway, J. Vac. Sci. Technol. B, 23 (2005) 486.

[9] T.Y. Zhou, X.C. Liu, C.C. Dai, E.W. Shi, Mater. Sci. Eng. B, 188 (2014) 59.

[10] K.H. Jung, Y.J. Sutou, J. Koike, Thin Solid Films, 520 (2012) 6922.

[11] T.Y Zhou, X.C. Liu, W. Huang, S.Y. Zhuo, Y.Q. Zheng, E.W. Shi, Chin. Phys. B, 24 (2015) 126801.

[12] M. Siad, M. Abdesslam, A.C. Chami, Appl. Surf. Sci. 258 (2012) 6819-6822.

[13] C.C. Dai, X.C. Liu, T.Y. Zhou, E.W. Shi, AIP Advance, 4 (2014) 047125.

[14] D.K. Schroder, 2006 Semiconductor Material and Device Characterization (3rd edn.) (New Jersey: John Wiley & Sons, Inc.) p.147.

[15] P. Macha, B. Barda, M. Kudrnova, Microelectron. Eng. 87 (2010) 274.

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