Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC
A sandwich structure of Ni/Nb/4H-SiC was prepared and annealed at different temperature from 750°C to 1050°C. The electrical property and crystalline structure of Ni/Nb electrode was characterized by transmission line method and X-ray diffraction. It was found that the annealing temperature and the thickness of Ni/Nb layer played an important role in obtaining Ohmic contact. A low specific contact resistance of 1.1×10-5 Ω·cm2 was obtained when the Ni(50nm)/Nb(50nm) electrode was annealed at 1050°C. The Ohmic contact mechanism of Ni/Nb/4H-SiC was proposed.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
X. C. Liu et al., "Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC", Materials Science Forum, Vol. 924, pp. 405-408, 2018