Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face

Abstract:

Article Preview

Low-resistance Ohmic contact on n+ 4H-SiC C-face with Titanium was demonstrated. In a conventional NiSi Ohmic contat on n-type 4H-SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, laser annealing and Ti metal were introduced to form both silicide and carbide. Ti (75 nm)/SiC and Ni (75 nm)/SiC Ohmic contacts were formed on backside C-face of high concentration impurity doped 4H-SiC substrates with and without activation annealing. Electrical properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient. As the result, the lowest specific contact resistance of 7.9×10-5 Ωcm2 was obtained in Ti (75 nm)/SiC sample in the case of ion implanted sample at 500°C and with activation annealing at a laser power of 2.2 J/cm2.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

409-412

Citation:

M. de Silva et al., "Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face", Materials Science Forum, Vol. 924, pp. 409-412, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] T.Kimoto, Jpn. J. Appl. Phys. 54, 040103 (2015).

[2] F. Roccaforte, F. La Via, and V. Raineri, Int. J. Hi. Spe. Ele. Syst. 15, 781 (2005).

DOI: https://doi.org/10.1142/s0129156405003429

[3] F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno , A. Castaldini , and A. Cavallini, Microelectron. Eng. 70, 519-523 (2003).

DOI: https://doi.org/10.1016/s0167-9317(03)00464-7

[4] Ts. Marinova, V. Krastev, C. Hallin, R. Yakimova, and E. Janzen, Appl. Surf. Sci. 99, 119-125 (1996).

[5] M. De Silva, S. Ishikawa, T. Miyazaki, T. Kikkawa, and S-I. Kuroki, Appl. Phys. Lett. 109, 012101 (2016).

[6] M. De Silva, T. Kawasaki, T. Miyazaki, T. Koganezawa, S. Yasuno, and S-I. Kuroki, Appl. Phys. Lett. 110, 252108 (2017).

[7] Dieter K. Schroder, Semiconductor Material and device characterization, Third ed., Arizona State University, Tempe, AZ, pp.135-149 (2006).

Fetching data from Crossref.
This may take some time to load.