Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures

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The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous and subsequently activated at 1700 °C. Ni metal contacts fabricated on phosphorous implanted and annealed epilayers produced Ohmic contacts with a specific contact resistivity (ρc) of ~7.2x10-5 Ω.cm2 at an annealing temperature of 550 °C. ρc decreased with further annealing temperature reaching a value of ~2.1x10-5 Ω.cm2 at 1000 °C. XRD analysis showed that nickel silicide phase was formed at both 550 °C and 1000 °C.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

413-416

Citation:

V. K. Sundaramoorthy et al., "Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures", Materials Science Forum, Vol. 924, pp. 413-416, 2018

Online since:

June 2018

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