Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs
The incorporation of Germanium (Ge) in 4H-SiC has recently being reported as enabling an increase of the electron mobility in n-type doped layers. The present work aims at evaluating the impact of the Ge doping on two types of SiC devices: Merged PiN-Schottky (MPS) diodes and Trench MOSFETs.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
C. Heidorn et al., "Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs", Materials Science Forum, Vol. 924, pp. 419-422, 2018