Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs


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The incorporation of Germanium (Ge) in 4H-SiC has recently being reported as enabling an increase of the electron mobility in n-type doped layers. The present work aims at evaluating the impact of the Ge doping on two types of SiC devices: Merged PiN-Schottky (MPS) diodes and Trench MOSFETs.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




C. Heidorn et al., "Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs", Materials Science Forum, Vol. 924, pp. 419-422, 2018

Online since:

June 2018





* - Corresponding Author

[1] G. Katulka, C. Guedj, J. Kolodzey, R. G. Wilson, C. Swann, M. W. Tsao, and J. Rabolt, Appl. Phys. Lett. 74, no. 4, p.540–542 (1999).


[2] T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G. Ferro, H. B. Weber, and M. Krieger, Mater. Sci. Forum 778-780, p.261–264 (2014).


[3] K. Roe, M. Dashiell, G. Xuan, E. Ansorge, G. Katulka, N. Sustersic, X. Zhang, and J. Kolodzey, High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference, pp.201-206 (2002).


[4] T. Sledziewski, M. Vivona, K. Alassaad, P. Kwasnicki, et al., Journal of Applied Physics 120, 205701 (2016).

[5] D. Peters, R. Siemieniec, T. Aichinger, T. Basler, R. Esteve, W. Bergner, D. Kueck, to be published in 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (2017).


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