Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs

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The incorporation of Germanium (Ge) in 4H-SiC has recently being reported as enabling an increase of the electron mobility in n-type doped layers. The present work aims at evaluating the impact of the Ge doping on two types of SiC devices: Merged PiN-Schottky (MPS) diodes and Trench MOSFETs.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

419-422

Citation:

C. Heidorn et al., "Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs", Materials Science Forum, Vol. 924, pp. 419-422, 2018

Online since:

June 2018

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