Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

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In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

440-443

Citation:

Y. Bonyadi et al., "Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment", Materials Science Forum, Vol. 924, pp. 440-443, 2018

Online since:

June 2018

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