Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors


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Effects of CF4 etching on 4H-SiC MOS capacitor were investigated. Fluorine atoms were introduced to surface of 4H-SiC using CF4 dry etching process as a surface treatment, and 4H-SiC MOS capacitors with dry-oxide were fabricated with this treatment. As the results, breakdown electric field of the MOS capacitors was increased and variation of the characteristics became lower than that of MOS capacitor without this treatment.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




K. Kobayakawa et al., "Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors", Materials Science Forum, Vol. 924, pp. 465-468, 2018

Online since:

June 2018




* - Corresponding Author

[1] H. Nagatsuma, S-I. Kuroki, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, M. Östling, and C.-M. Zetterling, Mat. Sci. Forum. 858, 573-576 (2016).

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.573

[2] T. Sunada, T. Yasaka, M. Takakura, T. Sugiyama, S. Miyazaki and M. Hirose, Jpn. J. Appl. Phys., 29(12) L2408-L2410 (1990).

DOI: https://doi.org/10.1143/jjap.29.l2408

[3] Yuichiro Mitani, Hideki Satake, Yasushi Nakasaki, and Akira Toriumi, IEEE Trans. Electron Devices, 50(11), 2221-2226 (2003).

DOI: https://doi.org/10.1109/ted.2003.818152

[4] C. H. Bjorkman, H. Nishimura, T. Yamazaki, J. L. Alay, M. Fukuda, and M. Hirose, Mat. Res. Soc. Symp. Proc. Vol. 386 (1995).

[5] L. K. Bera, W. K. Choi, W. Feng, C. Y. Yang and J. Mi, Appl. Phys., Vol. 77-2 (2000).