Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal

Abstract:

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The modified crucible in the top seeded solution growth (TSSG) method was proposed to get the stable growth condition and the enhanced growth rate. The temperature gradient and the distribution of dissolved carbon in the solvent were obtained by numerical approaches. Compared simulation results and experiment, we investigated the region where is the most of dissolved carbon and it is supplied to the seed through what path. The cross-sectional samples of crucibles and grown SiC crystals were systematically analyzed to investigate the effect of the crucible modification on SiC crystal growth.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

47-50

Citation:

Y. G. Kim et al., "Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal", Materials Science Forum, Vol. 924, pp. 47-50, 2018

Online since:

June 2018

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$38.00

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DOI: https://doi.org/10.1016/s0921-4526(01)00795-5

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