Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3


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3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




M. I. Idris et al., "Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3", Materials Science Forum, Vol. 924, pp. 490-493, 2018

Online since:

June 2018




* - Corresponding Author

[1] G. Y. Chung, et. al. , Appl. Phys. Lett., 76, 13, (2000).

[2] G. Liu, et. al., IEEE Elec. Dev. Lett., 34, 3, (2013).

[3] F. Roccaforte, et. al., Appl. Surf. Sci., 301 (2014).

[4] M. I. Idris, et. al., J. Appl. Phys. 120, 214902 (2016).

[5] C. T. Banzhaf, et. al., Mater. Sci. Forum, 740-742, 691-694, (2013).

[6] Y. Nanen, et. al., IEEE Trans. On Elec. Dev. 56, 11 (2009).

[7] R. Mahapatra, et. al., J. Appl. Phys., 102, 024105 (2007).

[8] I. P. Nikitina, et. al., Semicond. Sci. Technol., 21, 7, (2006).

[9] H. Yoshioka, et. al., J. Appl. Phys. 111, 014502 (2012).

[10] G. Kapila, et. al., IEEE Elec. Dev. Lett., 28, 3, (2007).

[11] M. H. Lin, et. al., ECS J. of Solid State Sci. and Technol., 6, 4, (2017).

[12] Jiro Yota, et. al., J. Vac. Sci. Technol. A, 31, 01A134 (2013).

[13] M. W. Cole, et. al., in Ferroelectrics - Material Aspects, Chapter 8, Intech Open.

[14] H. Yano, et. al., Appl. Phys. Lett., 78, 3, (2001).