SEMI Standards for SiC Wafers


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SEMI Standards charter is to develop standards that benefit the semiconductor industry. The SEMI organization has evolved over the last 40 years into an international organization with covering all aspects of semiconductor and flat panel materials and devices. SEMI Standards provides the framework for the development of consensus based standards documents. At present there are two published standards specific to silicon carbide, the first dealing with dimensions, properties and ordering information for SiC wafers, and the second defining a nomenclature for defects found on SiC: SEMI M55-0817 Specification for Polished Monocrystalline Silicon Carbide Wafers SEMI M81-0611 Guide to Defects Found on Monocrystalline Silicon Carbide Substrates Additional standards applicable to various semiconductor wafers also are available and new SiC related standards are being developed based on industry needs and volunteer participation.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




J. D. Oliver et al., "SEMI Standards for SiC Wafers", Materials Science Forum, Vol. 924, pp. 5-10, 2018

Online since:

June 2018




* - Corresponding Author

[1] Semiconductor Equipment and Materials Institute was the initial organization name, then changed to Semiconductor Equipment and Materials International with the expansion beyond North America and now SEMI to reflect the global organization.

[2] Robert Scace, The History of SEMI Standards: The first 25 Years, Jan. 2000, unpublished.

[3] Oliver Hogan, Colm Sheehy and Rajini Jayasuriya, The Economic Contribution of Standards to the UK Economy Published by UK Department for Business Innovation & Skills, 389 Chiswick High Road, London W4 4AL. June 2015

[4] SEMIViews; Link to view Published Standards Documents -

[5] E. Emorhokpor, E. Carlson, J. Wan, A. Weber, C. Basceri, J. Jenny, R. Sandhu, J. Oliver, F. Burkeen, A. Somanchi, V. Velidandla, F. Orazio, A. Blew, M. Goorsky, M. Dudley and W.M. Vetter, Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates, Materials Science Forum Vols. 527-529 (2006).


[6] Membership Information -