Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs
In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as significant improvement of channel field-effect mobility on devices with BSG than that on devices with standard NO anneal. In addition, the results indicate interface trap density decreases with increasing B concentration at the interface of BSG/4H-SiC, which in turn, results in higher channel mobility.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
Y. J. Zheng et al., "Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs", Materials Science Forum, Vol. 924, pp. 502-505, 2018