Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

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In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as significant improvement of channel field-effect mobility on devices with BSG than that on devices with standard NO anneal. In addition, the results indicate interface trap density decreases with increasing B concentration at the interface of BSG/4H-SiC, which in turn, results in higher channel mobility.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

502-505

Citation:

Y. J. Zheng et al., "Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs", Materials Science Forum, Vol. 924, pp. 502-505, 2018

Online since:

June 2018

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