Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent


Article Preview

SiC crystals are grown using a Si-Cr-based solvent by a top-seeded solution growth (TSSG) method by changing the dipping time after when the growth temperature is reached. Step-flow-like curve morphologies were observed for a dipping time after 15 min, while polycrystallization occurred at the periphery for that after 120 min, which corresponded to the dipping under unsaturated and supersaturated carbon in the solvent, respectively. Furthermore, the solution growth of SiC with dipping under unsaturated carbon was easily realized by the growth from the crucible bottom, step-flow-like growth was achieved. Using this technique, dominant polytypes of SiC in various growth conditions after stable seed dipping under the unsaturation in the solvent can be demonstrated.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




T. Taishi et al., "Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent", Materials Science Forum, Vol. 924, pp. 51-54, 2018

Online since:

June 2018




* - Corresponding Author

[1] K. Kusunoki, N. Okada, K. Kamei, K. Moriguchi, H. Daikoku, M. Kado, H. Sakamoto, T. Bessho, T. Ujihara, Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique, J. Cryst. Growth 395 (2014) 68–73.


[2] H. Daikoku, M. Kado, A. Seki, K. Sato, T. Bessho, K. Kusunoki, H. Kaidou, Y. Kishida, K. Moriguchi, K. Kamei, Solution growth on concave surface of 4H-SiC crystal, Cryst. Growth Des. 16 (2016) 1256–1260.


[3] K. Maruyama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara, Two-step SiC solution growth for dislocation reduction, J. Cryst. Growth 468 (2017) 874-878.


[4] M. Kado, H. Daikoku, H. sakamoto, H. Suzuki, T. Bessho, N. Yashiro, K. Kusunoki, N. Okada, K. Moriguch, K. Kamei, High-speed growth of 4H-SiC single crystal using Si-Cr based melt, Mater. Sci. Forum 740–742 (2013) 73–76.


[5] K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, T. Tanaka, A. Yauchi, Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt, J. Cryst. Growth 311 (2009) 855–858 (2009).


[6] Y. Inomata, M. Mitomo, Z. Inoue, H. Tanaka, Thermal stability of the basic structure of SiC, Yogyo-kyokai-shi, 77 (1969) 130-135. [In Japanese].

[7] T. Taishi, K. Hoshikawa, H. Sakamoto, H. Suzuki, Solution growth of SiC crystal from the crucible bottom, Proc. of The 6th International Symposium on Advanced Science and Technology of Sillicon Materials, 2012, pp.67-70.

[8] T. Taishi, X. Huang, I. Yonenaga, K. Hoshikawa, Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding, J. Cryst. Growth 258 (2003) 58-64.