PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices

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PowerAmerica sponsored the development by NCSU of a process for manufacturing power MOSFETs and JBS Rectifiers in 2015. This process, named PRESiCETM, was successful in making 1.2 kV rated state-of-the-art 4H-SiC power devices (MOSFETs, BiDFETs, and JBS Rectifiers) in the X-Fab foundry. In addition, we were successful in monolithically integrating a JBS fly-back rectifier into the power MOSFET structure to create the power JBSFET which allows saving significant (~ 40 %) chip area and reducing package count in half. In the second year (2016), NCSU has qualified the process for manufacturing these power devices at X-Fab.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

523-526

Citation:

B. J. Baliga et al., "PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices", Materials Science Forum, Vol. 924, pp. 523-526, 2018

Online since:

June 2018

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$38.00

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