PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices
PowerAmerica sponsored the development by NCSU of a process for manufacturing power MOSFETs and JBS Rectifiers in 2015. This process, named PRESiCETM, was successful in making 1.2 kV rated state-of-the-art 4H-SiC power devices (MOSFETs, BiDFETs, and JBS Rectifiers) in the X-Fab foundry. In addition, we were successful in monolithically integrating a JBS fly-back rectifier into the power MOSFET structure to create the power JBSFET which allows saving significant (~ 40 %) chip area and reducing package count in half. In the second year (2016), NCSU has qualified the process for manufacturing these power devices at X-Fab.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
B. J. Baliga et al., "PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices", Materials Science Forum, Vol. 924, pp. 523-526, 2018