Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

Abstract:

Article Preview

In this work a comparison between different 6 inches 4H-SiC commercial substrates after post processing has been shown. The main comparison was done between two different suppliers after a thinning process that leaves the sample with a final thickness of 150 microns. After the processing the two substrates show different behavior with different curvature and residual stress. X-Ray diffraction show different crystal quality and curvature values of the substrates. Micro-Raman show different residual stress of the substrates before and after the thinning process. Moreover, molten KOH etching for dislocation detection also show different value of dislocation density for both substrates.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

535-538

Citation:

R. Anzalone et al., "Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate", Materials Science Forum, Vol. 924, pp. 535-538, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] S. Dimitrijev, P. J., Microelectronics Reliability 43 (2003) 225-233.

[2] St.G. Muller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M. Brady, D. Henshall, J.R. Jenny, D.Malta, C.H. Carter Jr., J. Crystal Growth 211 (2000) 325-332.

[3] Yu.M. Tairov, V.F. Tsvetkov, J. Crystal Growth 43 (1978) 209-212.

[4] R. Anzalone, A. Alberti, F. LaVia, Materials Letters118(2014)130-133.

[5] M. Syvajarvi, R. Yakimova, and E. Janzen, J. Electrochem. Soc., 147, 3519 (2000).

[6] Lin Dong, Liu Zheng , Xingfang Liu , Feng Zhang, Guoguo YanXiguang Li, Guosheng Sun and Zhanguo Wang, Materials Science Forum Vols. 740-742 (2013) pp.243-246.

[7] R. Yakimova, A. HylCn, M. Tuominen, M. Syvajarvi, E. Jarzen, Diam. Rel. Mat. 6 (1997), 1456.

[8] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology JohnWiley & Sons Singapore Pte. Ltd (2014) p.50.

Fetching data from Crossref.
This may take some time to load.