Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance


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In the ideal case, superjunction (SJ) drift regions theoretically exhibit a linear relationship between specific-on resistance Ron,sp and blocking voltage VBR, but this requires perfect charge balance between the alternating n and p pillars. If any degree of imbalance exists, the relationship becomes quadratic, similar to a conventional drift region, although with somewhat improved performance. In this work, we analyze superjunction drift regions in 4H-SiC under realistic degrees of charge imbalance and show that, with proper design, a reduction in specific on-resistance of 2~10x is possible as long as the imbalance remains less than ±20%.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




M. M. Alam et al., "Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance", Materials Science Forum, Vol. 924, pp. 563-567, 2018

Online since:

June 2018




* - Corresponding Author

[1] T. Kimoto, J. A. Cooper, Fundamentals of Silicon Carbide Technology, Wiley, Singapore, (2014).

[2] T. Fujihira, Theory of Semiconductor Superjunction Devices, Jpn. J. Appl. Phys. 36 (1997) 6254-6262.

[3] H. Wang, E. Napoli, F. Udrea, Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices, IEEE Trans. Electron Devices, 56 (2009) 3175-3182.


[4] T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, N. Sano, Impact ionization coefficients of 4H silicon carbide, Appl. Phys. Lett., 85 (2004) 1380-1382.


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