Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+
In this work, >2kV PiN diodes with >10um deep implant of B+ and 6um deep implant of Al+ have been fabricated to evaluate the quality of resulting pn junction after high-energy implantation. Acceptable low leakage currents at reverse bias and stable avalanche breakdown were observed for high energy implanted diodes (HEI-diodes) when compared to No-HEI-diodes that suggests minimal defect sites present after activation anneal.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
R. Ghandi et al., "Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+", Materials Science Forum, Vol. 924, pp. 573-576, 2018