Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+

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In this work, >2kV PiN diodes with >10um deep implant of B+ and 6um deep implant of Al+ have been fabricated to evaluate the quality of resulting pn junction after high-energy implantation. Acceptable low leakage currents at reverse bias and stable avalanche breakdown were observed for high energy implanted diodes (HEI-diodes) when compared to No-HEI-diodes that suggests minimal defect sites present after activation anneal.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

573-576

Citation:

R. Ghandi et al., "Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+", Materials Science Forum, Vol. 924, pp. 573-576, 2018

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June 2018

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[1] T. Masuda et al., 0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET,, Materials Science Forum, Vol. 897, pp.483-488, (2017).

DOI: https://doi.org/10.4028/www.scientific.net/msf.897.483

[2] R. Kosugi et al., First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method", 26th International Symposium on Power Semiconductor Devices & IC,s (ISPSD), 2014, pp.346-349.

DOI: https://doi.org/10.1109/ispsd.2014.6856047

[3] T.Kimoto et al., High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes,, J. Appl. Phys. 91(7) 2002, pp.4242-4248.

DOI: https://doi.org/10.1063/1.1459096

[4] H. Matsurra et al., Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped pp-type 4H-SiC epilayers,, J. Appl. Phys. 96 (5) 2004, pp.2708-2715.

DOI: https://doi.org/10.1063/1.1775298