4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness

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A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

585-588

Citation:

A. Gendron-Hansen et al., "4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness", Materials Science Forum, Vol. 924, pp. 585-588, 2018

Online since:

June 2018

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