4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness


Article Preview

A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




A. Gendron-Hansen et al., "4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness", Materials Science Forum, Vol. 924, pp. 585-588, 2018

Online since:

June 2018




* - Corresponding Author

[1] K. Hamada, M. Nagao, M. Ajioka, F. Kawai, SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles,, IEEE Transactions on Electron Devices 62 (2015) 278-285.

DOI: https://doi.org/10.1109/ted.2014.2359240

[2] T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S. Mitani, H. Sakaiti, Y. Yokotsuji, High Performance SiC Trench Devices with Ultra-low Ron,, IEDM Proceedings (2011) 599-601.

DOI: https://doi.org/10.1109/iedm.2011.6131619

[3] K. Chatty, S. Banerjee, K. Matocha, 650V and 900V, 150A SiC Schottky Diode for Automotive Applications,, WiPDA Proceedings (2016) 143-146.

DOI: https://doi.org/10.1109/wipda.2016.7799926

[4] C. Winterhalter, H.-R. Chang, R.N. Gupta, Optimized 1200V Silicon Trench IGBTs with Silicon Carbide Schottky Diodes,, Industry Application Conference Proceedings (2000) 2928-2933.

DOI: https://doi.org/10.1109/ias.2000.882582

[5] T. Basler, R. Rupp, R. Gerlach, B. Zippelius, M. Draghici, Avalanche Robustness of SiC MPS,, PCIM Europe Proceedings (2016) 180-187.

[6] A. Konstantinov, S. Jinman, S. Young, F. Allerstam, T. Neyer, Silicon Carbide Schottky-Barrier Diode Rectifiers with High Avalanche Robustness,, PCIM Europe Proceedings (2015) 586-592.

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.777