Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers
Temperature-dependent mechanisms and characteristics of 4H-SiC JBS rectifiers were described by theoretical and experimental results. The forward on-resistance of 4H-SiC JBS rectifier consists of several components, the drift region resistance is most sensitive to temperature than others. Comparing theoretical results with experimental data indicates that the leakage current is mainly affected by the thermionic emission, the image force barrier height lowering and tunneling. At different temperatures and reverse bias, the contribution of barrier lowering and the tunneling to leakage current is not the same. The temperature of critical point decreases with the increasing of the concentration of ND or the reverse bias voltage VR. Samples with the doping concentration of ND=6.5E15cm-3 and ND=1E16cm-3 were manufactured in the same process. The forward I–V-T and reverse I–V-T characteristics of the JBS samples were measured at different temperatures (300K to 523K), and temperature-dependent ideality factor, barrier height and resistance were also analyzed, which are in good agreement with simulation results.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
Y. D. Tang et al., "Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers", Materials Science Forum, Vol. 924, pp. 589-592, 2018