Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

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In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

593-596

Citation:

B. Asllani et al., "Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes", Materials Science Forum, Vol. 924, pp. 593-596, 2018

Online since:

June 2018

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