Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes
In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
B. Asllani et al., "Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes", Materials Science Forum, Vol. 924, pp. 593-596, 2018