SiC MPS Devices: One Step Closer to the Ideal Diode

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We report on the development of a new generation of SiC Schottky rectifier devices employing a Molybdenum based barrier metal system and a new stripe cell design for field shielding and optimized area utilization. The Schottky barrier height is reduced and thus the conduction losses are decreased significantly. The balance between forward conduction and reverse leakage losses as well as the homogeneity and stability of the new barrier system are investigated carefully.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

609-612

Citation:

R. Elpelt et al., "SiC MPS Devices: One Step Closer to the Ideal Diode", Materials Science Forum, Vol. 924, pp. 609-612, 2018

Online since:

June 2018

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$38.00

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