Breakdown Field Model for 3C-SiC Power Device Simulations


Article Preview

Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




H. Fardi and B. van Zeghbroeck, "Breakdown Field Model for 3C-SiC Power Device Simulations", Materials Science Forum, Vol. 924, pp. 617-620, 2018

Online since:

June 2018




* - Corresponding Author

[1] B. Xin, R. Jia, J. Hua, C. Tsai, H. Lin, Y. Zhang, Applied Surface Science 357 (2015) 985–993.

[2] V. Jokubavicius, et al., Crystal Growth & Design 15 (2015) 2940−2947.

[3] V. Jokubavicius, et al. Crystal Growth & Design 14 (12) (2014) 6514-6520.

[4] J. W. Sun, et al., Appl. Phys. Lett. 100 (2012) 252101.

[5] M. Kobayashi, et al., Materials Science Forum 717-720 (2012) 1109-1112.

[6] C. W. Liu and J. C. Sturm, J. Appl. Phys. 82 (1997) 4558.

[7] P. G. Neudeck, D. J. Spry, A. J. Trunek, Materials Science Forum 527-529 (2006) 1335.

[8] P. G. Neudeck, et al., IEEE Trans. on Electron Devices 41 (1994) 826.

[9] D. J. Spry, A. J. Trunek, P. G. Neudeck, Materials Science Forum 457-460 (2004) 1061.

[10] E. Bellotti, H.-E. Nilsson, K. F. Brennan, P. Ruden, J. Appl. Phys. 85 (1999) 3211.

[11] L. Tirino, M. Weber, and K. F. Brennan, J. Appl. Phys. 94 (2003) 423.

[12] S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, (1984).

[13] Silvaco International, User Manual, (2016).


[15] S.M. Sze, Physics of Semiconductor Devices, second ed., Wiley & Sons, New York, (1980).