Analysis of Forward Surge Performance of SiC Schottky Diodes

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Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

621-624

Citation:

R. Radhakrishnan et al., "Analysis of Forward Surge Performance of SiC Schottky Diodes", Materials Science Forum, Vol. 924, pp. 621-624, 2018

Online since:

June 2018

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$38.00

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