A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure

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This paper proposes a novel high-gain 4H-SiC BJT structure with a p-type epitaxial layer on top of the extrinsic base layer. The current gain of the novel structure is improved by 140% compared with the conventional one by the simulator tool with the number of reasonable interface traps, which could be ascribed to the epitaxial layer to reduce the surface recombination in the extrinsic base. The process to fabricate this structure is also proposed in the paper.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

625-628

Citation:

Y. R. Zhang et al., "A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure", Materials Science Forum, Vol. 924, pp. 625-628, 2018

Online since:

June 2018

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