A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure


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This paper proposes a novel high-gain 4H-SiC BJT structure with a p-type epitaxial layer on top of the extrinsic base layer. The current gain of the novel structure is improved by 140% compared with the conventional one by the simulator tool with the number of reasonable interface traps, which could be ascribed to the epitaxial layer to reduce the surface recombination in the extrinsic base. The process to fabricate this structure is also proposed in the paper.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




Y. R. Zhang et al., "A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure", Materials Science Forum, Vol. 924, pp. 625-628, 2018

Online since:

June 2018




* - Corresponding Author

[1] T. Daranagama, V. Pathirana, F. Udrea, R. Mcmahon, in IEEE Brazilian Power Electronics Conference and Southern Power Electronics Conference. (2015): 1-6.

DOI: https://doi.org/10.1109/cobep.2015.7420235

[2] X. Li, Y. Luo, L Fursin, On the temperature coefficient of 4H-SiC BJT current gain, Solid State Electron 47, (2003): 233-239.

DOI: https://doi.org/10.1016/s0038-1101(02)00200-9

[3] H. S. Lee, M. Domeij, C. M. Zetterling, Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors. Appl. Phys. Lett. 92, (2008): 409.

DOI: https://doi.org/10.1063/1.2888965

[4] A. Salemi, H. Elahipanah, G. Malm, C. M. Zetterling, in IEEE International Symposium on Power Semiconductor Devices & IC's. (2015): 249-252.

[5] C. C. Sun, Y. R. Zhang, X. Deng, B. Zhang, in IEEE International Conference on Solid-State and Integrated Circuit Technology. (2014): 1-3.

[6] H. S. Lee, M. Domeij, R. Ghandi, C. M. Zetterling, High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE. IEEE Trans. Electron Dev. 55, (2008): 1894-1898.

DOI: https://doi.org/10.1109/ted.2008.926645