Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

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Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

653-656

Citation:

K. Tsagaraki et al., "Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques", Materials Science Forum, Vol. 924, pp. 653-656, 2018

Online since:

June 2018

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DOI: https://doi.org/10.1002/pssa.201600452

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