Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques


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Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




K. Tsagaraki et al., "Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques", Materials Science Forum, Vol. 924, pp. 653-656, 2018

Online since:

June 2018




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