Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques
Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
K. Tsagaraki et al., "Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques", Materials Science Forum, Vol. 924, pp. 653-656, 2018