On the Optimum Determination and Use of SiC VJFET Threshold Voltage
The threshold voltage of SiC JFETs has been determined from transfer characteristics by employing methods commonly used in the case of MOSFETs. The extracted values have been compared with the value determined from the fitting of experimental transfer characteristics with the Schockley model equation. Moreover, the variation of the extracted threshold voltage values with respect to channel width has been employed to determine the channel concentration without taking into account the Vbi value.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
M. Kayambaki et al., "On the Optimum Determination and Use of SiC VJFET Threshold Voltage", Materials Science Forum, Vol. 924, pp. 657-660, 2018