On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Abstract:

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The threshold voltage of SiC JFETs has been determined from transfer characteristics by employing methods commonly used in the case of MOSFETs. The extracted values have been compared with the value determined from the fitting of experimental transfer characteristics with the Schockley model equation. Moreover, the variation of the extracted threshold voltage values with respect to channel width has been employed to determine the channel concentration without taking into account the Vbi value.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

657-660

Citation:

M. Kayambaki et al., "On the Optimum Determination and Use of SiC VJFET Threshold Voltage", Materials Science Forum, Vol. 924, pp. 657-660, 2018

Online since:

June 2018

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$38.00

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