Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults


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To investigate effect of stacking faults (SFs) on switching reliability, we carried out switching tests using SiC-MOSFETs containing expanded SFs. Before the switching test, current stress was applied to the internal body-diode devices under test (DUTs) to expand SFs. The circuit configuration of the switching test we used was a half-bridge type and a double-pulse gate signal was applied to the lower arm DUT. The switching-voltage was 1.8kV and switching-current increased in about 8A steps to breakdown. Reverse recovery safety operation area (RRSOA) breakdown switching-current decreased dependently on the degree of SiC-MOSFET degradation. Reverse bias SOA (RBSOA) did not decrease even if degraded SiC-MOSFETs were used.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




R. Fujita et al., "Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults", Materials Science Forum, Vol. 924, pp. 676-679, 2018

Online since:

June 2018




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DOI: https://doi.org/10.1149/1.3238211

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