Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults


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To investigate effect of stacking faults (SFs) on switching reliability, we carried out switching tests using SiC-MOSFETs containing expanded SFs. Before the switching test, current stress was applied to the internal body-diode devices under test (DUTs) to expand SFs. The circuit configuration of the switching test we used was a half-bridge type and a double-pulse gate signal was applied to the lower arm DUT. The switching-voltage was 1.8kV and switching-current increased in about 8A steps to breakdown. Reverse recovery safety operation area (RRSOA) breakdown switching-current decreased dependently on the degree of SiC-MOSFET degradation. Reverse bias SOA (RBSOA) did not decrease even if degraded SiC-MOSFETs were used.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




R. Fujita et al., "Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults", Materials Science Forum, Vol. 924, pp. 676-679, 2018

Online since:

June 2018




[1] M. Bhatnagar, & B. J. Baliga, IEEE Transactions on Electron Devices, 40(3), 645-655(1993).

[2] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A.Weller, ... & J. W. Palmour, IEEE Electron Device Letters, 22(4), 176-178(2001).

[3] J. A. Cooper, & A. Agarwal, Proceedings of the IEEE, 90(6), 956-968(2002).

[4] M. Skowronski, S. Ha, J. Appl. Phys. 99, 01101 (2006).

[5] S. Yamamoto, Y. Nakao, N. Tomita, S. Nakata, and S. Yamakawa, Mater. Sci. Forum 778-780, 951-954 (2014).

[6] K. Konishi, S. Yamamoto, S. Nakata, Y. Toyoda and S. Yamakawa, Mater. Sci. Forum 778-780, 342-345 (2014).

[7] Joshua D. Caldwell, Robert E. Stahlbush, Mario G. Ancona, Orest J. Glembocki, and Karl D. Hobert, J. Appl. Phys. 108, 044503 (2010).

DOI: https://doi.org/10.1149/1.3238211