Vertical Tri-Gate Power MOSFETs in 4H-SiC

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A new class of power MOSFET, the vertical tri-gate MOSFET, is described and analyzed. The structure can reduce the 4H-SiC MOS channel resistance by up to an order-of-magnitude, producing the same benefit as if the mobility were increased by the same factor. In this paper we outline the fabrication procedure and describe the unit processes unique to this structure.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

680-683

Citation:

J. A. Cooper et al., "Vertical Tri-Gate Power MOSFETs in 4H-SiC", Materials Science Forum, Vol. 924, pp. 680-683, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

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