TCAD Modeling of a 1200 V SiC MOSFET

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In this work, TCAD modeling of a 1200 V SiC MOSFET is presented. The main focus is on modeling of the channel mobility, and the Coulomb scattering by interface traps and surface roughness are therefore included. For the Coulomb scattering, the interface trap profiles have been extrapolated from the subthreshold characteristics at room temperature, whereas the scattering due to surface roughness has been fitted by comparing to the transfer characteristics at high gate bias. A comparison with measurements for the transfer characteristic and the output characteristic is also presented. Results show that the reduction of the threshold voltage with increasing temperature and the temperature dependence of the output characteristics are properly modeled.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

689-692

Citation:

K. Lee et al., "TCAD Modeling of a 1200 V SiC MOSFET", Materials Science Forum, Vol. 924, pp. 689-692, 2018

Online since:

June 2018

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$38.00

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