Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs

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The behavior of silicon carbide power MOSFETs is analyzed using TCAD device simulations with respect to conduction and switching losses. Device designs with varying breakdown voltages are simulated. The contributions to the on-state resistance are shown at room and elevated temperature. Whereas channel and substrate resistance dominate at low breakdown voltages, drift and JFET resistance dominate at high breakdown voltages. With increasing temperature, the channel resistance decreases and thus the drift resistance is the main contributor already at medium breakdown voltages. Manufacturing processes of a device can have a high influence on its losses. Variations in interface mobility, drift doping, and p-body doping can lead to a significant change of on-resistance, internal capacitances, and reverse recovery charge. For higher voltage classes the drift layer properties should be of major interest as it influences on-resistance and reverse recovery charge.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

693-696

Citation:

J. Müting and U. Grossner, "Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs", Materials Science Forum, Vol. 924, pp. 693-696, 2018

Online since:

June 2018

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