Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

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This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at room temperature, increasing to 7.5 mΩ.cm2 at 175 °C. Total switching losses were less than 300μJ (VDD = 800V, ID = 20A). The devices showed excellent gate oxide reliability with VTH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (VGS = 25V) and 2500 hours (VGS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

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697-702

Citation:

S. Chowdhury et al., "Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry", Materials Science Forum, Vol. 924, pp. 697-702, 2018

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June 2018

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