Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at room temperature, increasing to 7.5 mΩ.cm2 at 175 °C. Total switching losses were less than 300μJ (VDD = 800V, ID = 20A). The devices showed excellent gate oxide reliability with VTH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (VGS = 25V) and 2500 hours (VGS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
S. Chowdhury et al., "Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry", Materials Science Forum, Vol. 924, pp. 697-702, 2018