Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures

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Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

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719-722

Citation:

S. Y. Liu et al., "Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures", Materials Science Forum, Vol. 924, pp. 719-722, 2018

Online since:

June 2018

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