Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs

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Standard packages like the TO-247-3L impose a strong restriction on the performance of SiC-transistors. The limitation arises predominantly from the common source inductance LS that is shared between the gate loop and the load circuit. To avoid this parasitic influence, advanced packages like the TO-247-4L or TO-263-7L offering a Kelvin source connection have been introduced. In this work, the influence of a Kelvin source connection on the switching behavior of a high power SiC-MOSFET is investigated.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

723-726

Citation:

C. Bödeker et al., "Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs", Materials Science Forum, Vol. 924, pp. 723-726, 2018

Online since:

June 2018

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